View DG646BH25_8908116.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DG646BH25 1/19 applications n variable speed a.c. motor drive inverters (vsd-ac) n uninterruptable power supplies n high voltage converters n choppers n welding n induction heating n dc/dc converters features n double side cooling n high reliability in service n high voltage capability n fault protection without fuses n high surge current capability n turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements key parameters i tcm 2000a v drm 2500v i t(av) 867a dv d /dt 1000v/ m s di t /dt 300a/ m s outline type code: h. see package details for further information. voltage ratings 2500 DG646BH25 conditions type number t vj = 125 o c, i dm = 50ma, i rrm = 50ma repetitive peak off-state voltage v drm v repetitive peak reverse voltage v rrm v 16 current ratings symbol parameter conditions max. i tcm t hs = 80 o c. double side cooled. half sine 50hz. v d = v drm , t j = 125 o c, di gq /dt = 40a/ m s, cs = 2.0 m f rms on-state current a a a 2000 867 1360 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled. half sine 50hz. i t(rms) i t(av) mean on-state current DG646BH25 gate turn-off thyristor replaces march 1998 version, ds4092-2.3 ds4092-3.0 january 2000
DG646BH25 2/19 surge ratings conditions 18.0 1.62 x 10 6 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 135 v/ m s max. units rate of rise of off-state voltage dv d /dt 1000 v/ m s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 1500v, i t = 2000a, t j = 125 o c, i fg > 30a, rise time > 1.0 m s a/ m s to 66% v drm ; r gk 1.5 w , t j = 125 o c gate ratings symbol parameter conditions v units max. 16 15 min. - 20 - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 19 60 - 50 30 - - m s 100 100 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) m s a/ m s kw w a thermal ratings and mechanical data symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - - 0.045 - 0.006 o c/w per contact cathode side cooled double side cooled units - 0.018 o c/w anode side cooled o c/w 0.03 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force - 125 22.0 18.0 -40 kn o c/w clamping force 20.0kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c - - l s peak stray inductance in snubber circuit nh 200 i t = 2000a, v dm = 2500v, t j = 125?c, di gq /dt = 40a/ m s, cs = 2.0 m f
DG646BH25 3/19 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50 - turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 6600 v rgm = 16v, no gate/cathode resistor m c i t = 2000a, v dm = 2500v snubber cap cs = 2.0 m f, di gq /dt = 40a/ m s t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units - 2.6 v v drm = 2500v, v rg = 0v - 100 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 1.0 v v d = 24v, i t = 100a, t j = 25 o c - 3.0 a ma mj 1188 - v d = 15000v i t = 2000a, di t /dt = 300a/ m s i fg = 30a, rise time < 1.0 m s m s 1.2 - - 3.0 m s - 4000 mj - 17.0 m s m s 2.0 - m s 19.0 - - 13200 m c - 650 a at 2000a peak, i g(on) = 7a d.c.
DG646BH25 4/19 curves -50 -25 0 25 50 75 100 125 150 junction temperature t j - (?c) fig 1 maximum gate trigger voltage/current 0 2.0 4.0 6.0 8.0 gate trigger current i gt - (a) 0 0.5 1.0 1.5 2.0 gate trigger voltage v gt - (v) i gt v gt 0 1.0 2.0 3.0 4.0 5.0 instantaneous on-state voltage v tm - (v) 0 1000 2000 3000 4000 instantaneous on-state current i tm - (a) measured under pulse conditions. i g(on) = 7a half sine wave 10ms t j = 125?c t j = 25?c fig.1 maximum gate trigger voltage/current vs junction temperature fig.2 on-state characteristics
DG646BH25 5/19 0 10 20 30 40 0.0001 0.001 0.01 0.1 1.0 pulse duration - (s) peak half sine wave on-state current - (ka) 0 0.005 0.010 0.015 0.020 0.001 0.01 0.1 1.0 10 time - (s) thermal impedance - ?c/w dc 0 1.0 2.0 3.0 4.0 snubber capacitance c s - (?) 0 1000 2000 3000 maximum permissible turn-off current i tcm - (a) conditions: t j = 125?c, v dm = v drm , di gq /dt = 40a/? fig.3 maximum dependence of i tcm on c s fig.4 maximum (limit) transient thermal impedance - double side cooled fig.5 surge (non-repetitive) on-state current vs time
DG646BH25 6/19 0 500 1000 1500 70 80 90 100 120 130 mean on-state current i t(av) - (a) maximum permissible case temperature - (?c) 4000 3000 2000 1000 0 mean on-state power dissipation - (w) conditions: i g(on) = 7a 180? 120? 60? 30? dc 0 400 800 1200 80 90 100 120 130 mean on-state current i t(av) - (a) maximum permissible case temperature - (?c) 3000 2000 1000 0 mean on-state power dissipation - (w) conditions: i g(on) = 7a 120? 90? 60? 30? 180? 200 600 1000 70 fig.6 steady state rectangluar wave conduction loss - double side cooled fig.7 steady state sinusoidal wave conduction loss - double side cooled
DG646BH25 7/19 0 20406080 peak forward gate current i fgm - (a) 2000 1500 1000 500 0 turn-on energy loss e on - (mj) conditions: t j = 25?c, i t = 2000a, c s = 2.0 f, r s = 10 ohms di/dt = 300a/ s, di fg /dt = 30a/ s v d = 1500v v d = 1000v v d = 750v 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 2000 1500 1000 500 0 turn-on energy loss e on - (mj) conditions: t j = 25?c, i fgm = 30a, c s = 2.0 f, r s = 10 , di/dt = 300a/ s, di fg /dt = 30a/ s v d = 1500v v d = 1000v v d = 750v fig.8 turn-on energy vs on-state current fig.9 turn-on energy vs peak forward gate current
DG646BH25 8/19 0 20406080 peak forward gate current i fgm - (a) 2000 1500 1000 500 0 turn-on energy loss e on - (mj) conditions: t j = 125?c, i t = 2000a, c s = 2.0?, r s = 10 ohms di/dt = 300a/?, di fg /dt = 30a/? v d = 1000v v d = 1500v v d = 750v 0 100 200 300 rate of rise of on-state current di t /dt - (a/?) fig 12 turn on energy rate of rise 2000 1500 1000 500 0 turn-on energy loss e on - (mj) conditions: i t = 2000a, t j = 125?c, c s = 2.0? r s = 10 ohms i fgm = 30a, di fg /dt = 30a/? v d = 1000v v d = 1500v v d = 750v 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 2000 1500 1000 500 0 turn-on energy loss e on - (mj) conditions: t j = 125?c, i fgm = 30a, c s = 2.0 f, r s = 10 ohms, di t /dt = 300a/ s, di f /dt = 30a/ s v d = 1500v v d = 1000v v d = 750v fig.10 turn-on energy vs on-state current fig.11 turn-on energy vs peak forward gate current fig.12 turn-on energy vs rate of rise of on-state current
DG646BH25 9/19 0 20406080 peak forward gate current i fgm - (a) 4.0 3.0 2.0 1.0 0 turn-on delay time and rise time - ( s) conditions: t j = 125?c, i t = 2000a, c s = 2.0 f, r s = 10 ohms, di/dt = 300a/ s, di fg /dt = 30a/ s, v d = 1500v 5.0 t d t r 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 4.0 3.0 2.0 1.0 0 turn-on delay and rise time - ( s) conditions: t j = 125?c, i fgm = 30a, c s = 2.0 f, v d = 1500v, r s = 10 , di t /dt = 300a/ s, di f /dt = 30a/ s t d t r fig.13 delay time & rise time vs turn-on current fig.14 delay time & rise time vs peak forward gate current
DG646BH25 10/19 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) fig 15 turn off energy on state current 2000 1500 1000 500 0 turn-off energy loss e off - (mj) conditions: t j = 25?c, c s = 2.0?, di gq /dt = 40a/? 2500 0.5x v drm 0.75x v drm v drm 20 30 40 50 60 70 rate of rise of reverse gate current di gq /dt - (a/?) 2500 2000 1500 1000 500 turn-off energy per pulse e off - (mj) conditions: t j = 25?c, c s = 2.0?, i t = 2000a 0.5x v drm 0.75x v drm v drm fig.15 turn-off energy vs on-state current fig.16 turn-off energy vs rate of rise of reverse gate current
DG646BH25 11/19 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) fig 17 turn off energy on state current 4000 3000 2000 1000 0 turn-off energy loss e off - (mj) conditions: t j = 125?c, c s = 2.0?, di gq /dt = 40a/? 0.5x v drm 0.75x v drm v drm 20 30 40 50 60 70 rate of rise of reverse gate current di gq /dt - (a/?) 5000 4000 3000 2000 1000 turn-off energy per pulse e off - (mj) conditions: t j = 125?c, c s = 2.0?, i t = 2000a 0.5x v drm 0.75x v drm v drm fig.17 turn-off energy vs on-state current fig.18 turn-off energy loss vs rate of rise of reverse gate current
DG646BH25 12/19 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 4000 3000 2000 1000 0 turn-off energy per pulse e off - (mj) conditions: t j = 125?c, v dm = v drm , di gq /dt = 40a/? c s = 4.0? c s = 2.0? 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 20.0 15.0 10.0 5.0 0 gate storage time t gs - (?) conditions: c s = 2.0?, di gq /dt = 40a/? t j = 25?c t j = 125?c fig.19 turn-off energy vs on-state current fig.20 gate storage time vs on-state current
DG646BH25 13/19 20 30 40 50 60 70 rate of rise of reverse gate current di gq /dt - (a/?) 30 25 20 15 10 gate storage time t gs - (?) conditions: c s = 2.0?, i t = 2000a t j = 25?c t j = 125?c 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 2.0 1.5 1.0 0.5 0 gate fall t gf - ( s) conditions: c s = 2.0 f, di gq /dt = 40a/ s t j = 25?c t j = 125?c fig.21 gate storage time vs rate of rise of reverse gate current fig.22 gate fall time vs on-state current
DG646BH25 14/19 20 30 40 50 60 70 rate of rise of reverse gate current di gq /dt - (a/?) 2.5 2.0 1.5 1.0 0.5 gate fall time t gf - (?) conditions: c s = 2.0?, i t = 2000a t j = 25?c t j = 125?c 0 500 1000 1500 2000 2500 3000 turn-off current i t - (a) 800 600 400 200 0 peak reverse gate current i gqm - (a) conditions: c s = 2.0?, di gq /dt = 40a/? t j = 25?c t j = 125?c fig.23 gate fall time vs rate of rise of reverse gate current fig.24 peak reverse gate current vs turn-off current
DG646BH25 15/19 20 30 40 50 60 70 rate of rise of reverse gate current di gq /dt - (a/ s) 650 600 550 500 450 peak reverse gate current i gqm - (a) conditions: c s = 2.0 f, i t = 2000a t j = 25?c t j = 125?c 700 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 8000 6000 4000 2000 0 total turn-off charge q gq - (?) conditions: c s = 2.0?, di gq /dt = 40a/? t j = 25?c t j = 125?c fig.25 peak reverse gate current vs rate of rise of reversegate current fig.26 turn-off gate charge vs on-state current
DG646BH25 16/19 20 30 40 50 60 70 rate of rise of reverse gate current di gq /dt - (a/?) 8000 7000 6000 5000 4000 turn-off gate charge q gq - (?) conditions: c s = 2.0?, i t = 2000a t j = 25?c t j = 125?c 0 500 1000 rate of rise of off-state voltage dv/dt - (v/ s) gate cathode resistance r gk - (ohms) v d = 1650v v d = 1250v 0.1 1.0 10 100 1000 t j = 125?c fig.27 turn-off gate charge vs rate of rise of reverse gate current fig.28 rate of rise of off-state voltage vs gate cathode resistance
DG646BH25 17/19 anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq recommended gate conditions: i tcm = 2000a i fg = 30a i g(on) = 7a d.c. t w1(min) = 20 s i gqm = 650 a di gq /dt = 40a/ s q gq = 6600 c v rg(min) = 2v v rg(max) = 16v these are recommended dynex semiconductor conditions. other conditions are permitted according to users gate drive specifications. fig.29 general switching waveforms
DG646BH25 18/19 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwi se. do not scale. 2 holes 3.60 0.05 x 2.0 0.1 deep (one in each electrode) 26 0.5 52 55 9.6 15? cathode aux. tube gate tube cathode anode 62.85 100 62.85 nominal weight: 820g clamping force: 20kn 10% lead length: 505mm package outine type code: h associated publications title application note number calculating the junction temperature or power semiconductors an4506 gto gate drive units an4571 recommendations for clamping power semiconductors an4839 use of v to , r t on-state characteristic an5001 impoved gate drive for gto series connections an5177
DG646BH25 19/19 power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage an d current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing need s of our customers. using the up to date cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). device clamps disc devices require the correct clamping force to ensure their safe operation. the pacs range offers a varied selection of pr e- loaded clamps to suit all of our manufactured devices. this include cube clamps for single side cooling of t 22mm clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. please refer to our application note on device clamping, an4839 heatsinks power assembly has its own proprietary range of extruded aluminium heatsinks. they have been designed to optimise the performance or our semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is availa ble on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or the factory. customer service centres france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 north america tel: 011-800-5554-5554. fax: 011-800-5444-5444 uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 sales offices france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 germany tel: 07351 827723 north america tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (831) 440-1988. fax: (831) 440-1989 / tel: (949) 733-3005. fax: (949) 733-2986. uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 these offices are supported by representatives and distributors in many countries world-wide. ? dynex semiconductor 2000 publication no. ds4092-3 issue no. 3.0 january 2000 technical documentation C not for resale. printed in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: 00-44-(0)1522-500500 fax: 00-44-(0)1522-500550 dynex power inc. unit 7 - 58 antares drive, nepean, ontario, canada k2e 7w6. tel: 613.723.7035 fax: 613.723.1518 toll free: 1.888.33.dynex (39639) this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning p ossible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the p erformance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.

▲Up To Search▲

Price & Availability of DG646BH25

	To Download DG646BH25 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .